2SD1466 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A High DC Current Gain : hFE= 200(Min) @ IC= 15A, VCE= 3V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance

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2SD1466 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1466
Manufacturer	Inchange Semiconductor
File Size	202.12 KB
Description	NPN Transistor
Datasheet	2SD1466 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A ·High DC Current Gain : hFE= 200(Min) @ IC= 15A, VCE= 3V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplification applications.