Inchange Semiconductor 2SD1597
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1597 |
|---|---|
| Datasheet | 2SD1597 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector Current -IC= 30A●High DC Current Gain- : hFE= 1000(Min)@ IC= 15A
●Low Collector Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency power amplifier and low speed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1597 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;IB=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ;IC=0 VCE(sat) Collector-Emitte...