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2SD1599 - NPN Transistor

General Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1599 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.