Inchange Semiconductor 2SD218
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD218 |
|---|---|
| Datasheet | 2SD218 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min)●Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 7A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Low saturation voltage●Excellent current gain linearity
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD218 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO E...