Datasheet Details
| Part number | 2SD833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.57 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD833-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD833.
| Part number | 2SD833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.57 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD833-INCHANGE.pdf |
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·High DC Current Gain- : hFE= 4000(Min) @IC= 3A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO(SUS) Collector-Emitter Voltage 50 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD833 | Transistor | Fuji Electric |
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