2SD836 - NPN Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE= 1000(Min.)@IC= 2A High Switching Speed Complement to Type 2SB750 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(

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Datasheet Details

Part number	2SD836
Manufacturer	Inchange Semiconductor
File Size	191.23 KB
Description	NPN Transistor
Datasheet	2SD836 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 2A ·High Switching Speed ·Complement to Type 2SB750 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.