Datasheet Details
| Part number | 2SD836 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SD836-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD836 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SD836-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE= 1000(Min.)@IC= 2A ·High Switching Speed ·Complement to Type 2SB750 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 8mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 2A ;
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|---|---|
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