Download 2SD836 Datasheet PDF
Inchange Semiconductor
2SD836
DESCRIPTION - High DC Current Gain- : h FE= 1000(Min.)@IC= 2A - High Switching Speed - plement to Type 2SB750 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - AF power amplifiers - General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power...