Download 2SD835 Datasheet PDF
Inchange Semiconductor
2SD835
DESCRIPTION - High DC Current Gain- : h FE= 400(Min) @IC= 4A - Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Electronic ignitor - Relay& solenoid drivers - Motor controls - Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO(SUS) Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature...