2SD835 Description
hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD835 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.