| Part number | 2SD835 |
|---|---|
| Datasheet | 2SD835-INCHANGE.pdf |
| File Size | 209.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD835 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
See all Inchange Semiconductor datasheets
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