Datasheet Details
| Part number | 2SD837 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.01 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD837-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD837 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.01 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD837-INCHANGE.pdf |
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·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD837 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;
IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD837A | NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SD833 | Silicon NPN Darlington Power Transistor |
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