| Part number | 2SD837 |
|---|---|
| Datasheet | 2SD837-INCHANGE.pdf |
| File Size | 211.01 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD837A | NPN Transistor | Panasonic Semiconductor |
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| 2SD833 | Silicon NPN Darlington Power Transistor |
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| 2SD835 | NPN Transistor |
| 2SD836 | NPN Transistor |
| 2SD800 | NPN Transistor |
| 2SD803 | NPN Transistor |
| 2SD807 | NPN Transistor |
| 2SD811 | NPN Transistor |
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| 2SD817 | NPN Transistor |
