Datasheet4U Logo Datasheet4U.com

2SD837 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain- : hFE= 1000(Min.)@IC= 3A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD837A NPN Transistor Panasonic Semiconductor
2SD832 Silicon Darlington NPN Transistor Fujitsu
2SD833 Transistor Fuji Electric
2SD834 SILICON POWER TRANSISTOR SavantIC
2SD834 (2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor TGS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD833 Silicon NPN Darlington Power Transistor
2SD834 NPN Transistor
2SD835 NPN Transistor
2SD836 NPN Transistor
2SD800 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD837 isc website：www.iscsemi.