2SD857 datasheet by Inchange Semiconductor.
| Part number | 2SD857 |
|---|---|
| Datasheet | 2SD857-INCHANGE.pdf |
| File Size | 208.34 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB762 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
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| 2SD800 | NPN Transistor |
| 2SD803 | NPN Transistor |
| 2SD807 | NPN Transistor |
| 2SD811 | NPN Transistor |
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