| Part number | 2SD859 |
|---|---|
| Datasheet | 2SD859-INCHANGE.pdf |
| File Size | 208.18 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage...
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD855 | NPN Transistor |
| 2SD856 | NPN Transistor |
| 2SD857 | Silicon NPN Power Transistor |
| 2SD858 | Silicon NPN Power Transistor |
| 2SD800 | NPN Transistor |
| 2SD803 | NPN Transistor |
| 2SD807 | NPN Transistor |
| 2SD811 | NPN Transistor |
| 2SD812 | NPN Transistor |
| 2SD817 | NPN Transistor |
