Inchange Semiconductor 3DD208
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 3DD208 |
|---|---|
| Datasheet | 3DD208 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.)●DC Current Gain- : hFE= 30~250(Min.)@IC= 0.5A
●Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 1A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulator and power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 3DD208 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorsELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage...