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BD224 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) DC Current Gain -hFE =30(Min)@ IC= -0.3A Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gene

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD224 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.