BD224 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE...

