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Inchange Semiconductor
BD224
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) - DC Current Gain -h FE =30(Min)@ IC= -0.3A - Good Linearity of h FE - Wide Area of Safe Operation - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -40 VEBO Emitter-Base Voltage -7 Collector Current-Continuous -4 Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature -6 ℃ Tstg Storage Temperature...