Inchange Semiconductor BD228
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.BD228 Specifications
- Max Collector Current : 1.5A
- Terminals : 3
- Collector Emitter Voltage : 60V
- Collector Emitter Saturation Voltage : 800mV
- Max Power Dissipation : 12W
- Power Dissipation : 12.5W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | BD228 |
|---|---|
| Datasheet | BD228 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 40(Min)@ IC= 0.15A●Complement to Type BD227/229/231
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in driver stages in television circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE BD226 45 VCBO Collector-Base Voltage BD228 60 BD230 100 BD226 45 VCEO Collector-Emitter Voltage BD228 60 BD230 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD226 45 BD228 60 BD230 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature 3.0 12.5 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD226/228/230 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
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