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BD228 - Silicon NPN Power Transistor

Download the BD228 datasheet PDF. This datasheet also covers the BD226 variant, as both devices belong to the same silicon npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in driver stages in television circuits.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD226-INCHANGE.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Inchange Semiconductor

Part Number Description
BD224 PNP Transistor
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BD227 PNP Transistor
BD229 PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD226 45 VCBO Collector-Base Voltage BD228 60 BD230 100 BD226 45 VCEO Collector-Emitter Voltage BD228 60 BD230 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD226 45 BD228 60 BD230 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature 3.0 12.