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BD226 - Silicon NPN Power Transistor

General Description

DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in driver stages in television circuits.

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD226 45 VCBO Collector-Base Voltage BD228 60 BD230 100 BD226 45 VCEO Collector-Emitter Voltage BD228 60 BD230 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD226 45 BD228 60 BD230 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature 3.0 12.