BD332
DESCRIPTION
- High DC Current Gain
- plement to type BD331
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IBM PC TJ Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
-60
-60
-6
-6
-0.15
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.08 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless...
Representative BD332 image (package may vary by manufacturer)
