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BD364 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Excellent Safe Operating Area Complement to Type BD365 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD364 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Excellent Safe Operating Area ·Complement to Type BD365 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.