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BD368 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Excellent Safe Operating Area Complement to Type BD369 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series

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Datasheet Details

Part number BD368
Manufacturer INCHANGE
File Size 178.89 KB
Description PNP Transistor
Datasheet download datasheet BD368 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD368 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Excellent Safe Operating Area ·Complement to Type BD369 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
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