BD368 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Excellent Safe Operating Area ·plement to Type BD369 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless...