Inchange Semiconductor BD367
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD367 |
|---|---|
| Datasheet | BD367 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)●Excellent Safe Operating Area
●Complement to Type BD366
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for linear amplifiers, series pass regulators, and inductive switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A IB Base Current-Continuous -5.0 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power TransistorsELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...