Inchange Semiconductor BD369
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD369 |
|---|---|
| Datasheet | BD369 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1.0V(Max)@ IC=-10A●DC Current Gain- : hFE= 20(Min)@IC=-10A
●Excellent Safe Operating Area
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -50 A IB Base Current-Continuous -7.5 A PD Total Power Dissipation @TC=25℃ 200 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W BD369 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorsELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collecto...