DC Current Gain-
: hFE= 20(Min)@ IC= 1A
Complement to Type BD376/378/380
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET
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isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD375
50
VCBO
Collector-Base Voltage BD377
75
V
BD379
100
BD375
45
VCEO
Collector-Emitter Voltage BD377
60
V
BD379
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
BD375/377/379
isc website：www.iscsemi.
BD375 Datasheet
