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BD378 - PNP Transistor

Download the BD378 datasheet PDF. This datasheet also covers the BD376 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain- : hFE= 20(Min)@ IC= -1A Complement to Type BD375/377/379 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD376-INCHANGE.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Inchange Semiconductor

Part Number Description
BD375 NPN Transistor
BD376 PNP Transistor
BD377 NPN Transistor
BD379 NPN Transistor
BD301 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD376 -50 VCBO Collector-Base Voltage BD378 -75 V BD380 -100 BD376 -45 VCEO Collector-Emitter Voltage BD378 -60 V BD380 -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BD376/378/380 isc website：www.