DC Current Gain-
: hFE= 20(Min)@ IC= -1A
Complement to Type BD375/377/379
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME
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isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD376
-50
VCBO
Collector-Base Voltage BD378
-75
V
BD380
-100
BD376
-45
VCEO
Collector-Emitter Voltage BD378
-60
V
BD380
-80
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
BD376/378/380
isc website：www.
BD376 Datasheet
