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BD379 - NPN Transistor

Download the BD379 datasheet PDF. This datasheet also covers the BD375 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain- : hFE= 20(Min)@ IC= 1A Complement to Type BD376/378/380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD375-INCHANGE.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Inchange Semiconductor

Part Number Description
BD375 NPN Transistor
BD376 PNP Transistor
BD377 NPN Transistor
BD378 PNP Transistor
BD301 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD375 50 VCBO Collector-Base Voltage BD377 75 V BD379 100 BD375 45 VCEO Collector-Emitter Voltage BD377 60 V BD379 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BD375/377/379 isc website：www.iscsemi.