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BD681

Manufacturer: Inchange Semiconductor

BD681 datasheet by Inchange Semiconductor.

BD681 datasheet preview

BD681 Datasheet Details

Part number BD681
Datasheet BD681-INCHANGE.pdf
File Size 184.91 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
BD681 page 2

BD681 Overview

·Collector Emitter Breakdown Voltage : V(BR)CEO = 100V ·DC Current Gain : hFE = 750(Min) @ IC= 1.5 A ·plement to Type BD682 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general-purpose amplifier applications.

BD681 from other manufacturers

View BD681 datasheet index

Brand Logo Part Number Description Other Manufacturers
STMicroelectronics Logo BD681 Complementary power Darlington transistors STMicroelectronics
Fairchild Semiconductor Logo BD681 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
ON Semiconductor Logo BD681 NPN Silicon Transistor ON Semiconductor
SavantIC Logo BD681 SILICON POWER TRANSISTOR SavantIC
Comset Semiconductors Logo BD681 Power Transistor Comset Semiconductors
Inchange Semiconductor logo - Manufacturer

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