Collector
Emitter Breakdown Voltage
: V(BR)CEO = 100V
DC Current Gain
: hFE = 750(Min) @ IC= 1.5 A
Complement to Type BD682
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as output de
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 100V ·DC Current Gain—
: hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD682 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
Tstg
Storage Temperature Range
0.
BD681 Datasheet
