Datasheet Summary
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector- Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min.)
- DC Current Gain-
: hFE = 750(Min)@ IC= 1.5A
- plement to Type BD684
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general-purpose amplifier...
