BD683 Overview
Description
Collector–Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min.) - DC Current Gain- : hFE = 750(Min)@ IC= 1.5A - Complement to Type BD684 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | BD683 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 204.36 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BD683 | Central Semiconductor | NPN SILICON POWER DARLINGTON TRANSISTOR |
| BD683 | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |
| BD683A | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |
| BD683 | TRANSYS | NPN TRANSISTORS |
| BD683 | SavantIC | SILICON POWER TRANSISTOR |