Datasheet Details
| Part number | BD683 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.36 KB |
| Description | NPN Transistor |
| Datasheet | BD683-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD683.
| Part number | BD683 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.36 KB |
| Description | NPN Transistor |
| Datasheet | BD683-INCHANGE.pdf |
|
|
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·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 120V(Min.) ·DC Current Gain— : hFE = 750(Min)@ IC= 1.5A ·Complement to Type BD684 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.12 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD683 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD683 | SILICON POWER TRANSISTOR | SavantIC |
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BD683 | NPN TRANSISTORS | TRANSYS |
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BD683 | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
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BD683 | NPN SILICON POWER DARLINGTON TRANSISTOR | Central Semiconductor |
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BD683 | NPN PLASTIC POWER DARLINGTON TRANSISTORS | CDIL |
| Part Number | Description |
|---|---|
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