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Inchange Semiconductor
BD682
DESCRIPTION - Collector- Emitter Breakdown Voltage- : V(BR)CEO = -100V - DC Current Gain- : h FE = 750(Min) @ IC= -1.5 A - plement to Type BD681 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as output devices in plementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -4 Base Current Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature...