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BDV67 - NPN Transistor

General Description

·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Complement to Type BDV66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV67 80 VCBO Collector-Base Voltage BDV67A 100 V BDV67B 120 BDV67C 140 BDV67 60 VCEO Collector-Emitter Voltage BDV67A 80 BDV67B 100 V BDV67C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.625 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDV67/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV67 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV67A BDV67B IC= 100mA ;IB= 0 BDV67C VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;

IB= 40mA VBE(on) Base-Emitter On Voltage IC= 10A ;

VCE= 3V ICEO Collector Cutoff Current VCE= 1/2VCEOmax;

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDV67/A/B/C.