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BDV67D - NPN Transistor

Description

Collector Current -IC= 16A Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A Complement to Type BDV66D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier a

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Complement to Type BDV66D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications BDV67D ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 VCEO Collector-Emitter Voltage 150 UNIT V V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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