Datasheet4U Logo Datasheet4U.com

BDV67A - NPN Transistor

Download the BDV67A datasheet PDF. This datasheet also covers the BDV67 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BDV67-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Complement to Type BDV66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV67 80 VCBO Collector-Base Voltage BDV67A 100 V BDV67B 120 BDV67C 140 BDV67 60 VCEO Collector-Emitter Voltage BDV67A 80 BDV67B 100 V BDV67C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 175 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.625 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDV67/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV67 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV67A BDV67B IC= 100mA ;IB= 0 BDV67C VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;

IB= 40mA VBE(on) Base-Emitter On Voltage IC= 10A ;

VCE= 3V ICEO Collector Cutoff Current VCE= 1/2VCEOmax;

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDV67/A/B/C.