| Part number | BDX66C |
|---|---|
| Download | BDX66C Datasheet (PDF) |
| File Size | 209.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
TT Electronics |
BDX66C | PNP DARLINGTON SILICON POWER TRANSISTOR |
Seme LAB |
BDX66C | Bipolar PNP Device |
SavantIC |
BDX66C | SILICON POWER TRANSISTOR |
Comset Semiconductors |
BDX66C | PNP SILICON DARLINGTONS POWER TRANSISTOR |
|
Seme LAB |
BDX66 | Bipolar PNP Device |
1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. IB= -40mA -2 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -3V -2.5 V VECF C-E Diode Forward Voltage IF= -10A -2 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax;.
