BDY38 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY38 TC=25℃ unless otherwise specified SYMBOL PARAMETER...