BDY27 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BDY27 | Bipolar NPN Device |
Comset Semiconductor |
BDY27 | (BDY26 - BDY28) NPN SILICON TRANSISTORS |
|
Seme LAB |
BDY27AS | Bipolar NPN Device |
|
Seme LAB |
BDY27B | Bipolar NPN Device |
|
Seme LAB |
BDY27C | Bipolar NPN Device |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
