| Part | BDY27 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 207.28 KB |
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| BDY27 | Seme LAB | Bipolar NPN Device |
| BDY27AS | Seme LAB | Bipolar NPN Device |
| BDY27B | Seme LAB | Bipolar NPN Device |
| BDY27C | Seme LAB | Bipolar NPN Device |
| BDY27 | Comset Semiconductor | NPN SILICON TRANSISTORS |
