| Part number | BDY39 |
|---|---|
| Datasheet | BDY39-INCHANGE.pdf |
| File Size | 203.25 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Excellent Safe Operating Area ·DC Current Gain- : hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power AF output stages and in stabilized power supplies.
See all Inchange Semiconductor datasheets
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