Datasheet Details
| Part number | BDY39 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.25 KB |
| Description | NPN Transistor |
| Datasheet | BDY39-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BDY39.
| Part number | BDY39 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.25 KB |
| Description | NPN Transistor |
| Datasheet | BDY39-INCHANGE.pdf |
|
|
|
·Excellent Safe Operating Area ·DC Current Gain- : hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power AF output stages and in stabilized power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22.5 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 1.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=30mA;
IB=0 VCEV(SUS) Collector-Emitter Sustaining Voltage IC=1mA;
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