Datasheet Details
| Part number | BDY42 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.44 KB |
| Description | NPN Transistor |
| Datasheet | BDY42-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor BDY42.
| Part number | BDY42 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.44 KB |
| Description | NPN Transistor |
| Datasheet | BDY42-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 5A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCES Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Dissipation@TC=25℃ TJ Junction Temperature 3 A Power 60 W 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY42 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Part Number | Description |
|---|---|
| BDY43 | NPN Transistor |
| BDY44 | NPN Transistor |
| BDY45 | NPN Transistor |
| BDY46 | Silicon NPN Power Transistor |
| BDY47 | NPN Transistor |
| BDY48 | NPN Transistor |
| BDY49 | NPN Transistor |
| BDY25 | NPN Transistor |
| BDY26 | NPN Transistor |
| BDY27 | NPN Transistor |