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BDY45 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) DC Current Gain- : hFE=20(Min.)@IC = 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 15A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation

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isc Silicon NPN Power Transistor BDY45 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
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