Datasheet Details
| Part number | BDY45 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.98 KB |
| Description | NPN Transistor |
| Datasheet | BDY45-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BDY45.
| Part number | BDY45 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.98 KB |
| Description | NPN Transistor |
| Datasheet | BDY45-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 15A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCES Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 17 A IB Base Current 5 A PC Collector Power Dissipation@TC≤45℃ 95 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.37 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Part Number | Description |
|---|---|
| BDY42 | NPN Transistor |
| BDY43 | NPN Transistor |
| BDY44 | NPN Transistor |
| BDY46 | Silicon NPN Power Transistor |
| BDY47 | NPN Transistor |
| BDY48 | NPN Transistor |
| BDY49 | NPN Transistor |
| BDY25 | NPN Transistor |
| BDY26 | NPN Transistor |
| BDY27 | NPN Transistor |