BDY43 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 1A ·Collector-Emitter Saturation Voltage-.
BDY43 is NPN Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| BDY42 | NPN Transistor |
| BDY44 | NPN Transistor |
| BDY45 | NPN Transistor |
| BDY46 | Silicon NPN Power Transistor |
| BDY47 | NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 1A ·Collector-Emitter Saturation Voltage-.