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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V (Min) ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in series regulators, power amplifiers,
Inverters , deflection circuits , switching regulators, and high voltage bridge amplifiers..
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature
Tstg
Storage Temperature Range
200
V
200
V
6
V
3.
BDY48 Datasheet
