Datasheet Details
| Part number | BDY49 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.58 KB |
| Description | NPN Transistor |
| Datasheet | BDY49-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY49 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.58 KB |
| Description | NPN Transistor |
| Datasheet | BDY49-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Excellent Safe Operating Area ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 100 V 6 V 30 A IB Base Current-Continuous PC Collector Power Dissipation TJ Junction Temperature 8 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ HERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W BDY49 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY49 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A;
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