BDY49 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Excellent Safe Operating Area ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY49 TC=25℃ unless otherwise specified...