BU132
BU132 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Excellent Safe Operating Area
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 0.5A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 600V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC ICM PC TJ Tstg
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation@TC=25℃
Junction Temperature
℃
Storage Temperature
-65~150 ℃
BU132 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50m A ; IB=...
