Datasheet Details
| Part number | BU132 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.22 KB |
| Description | NPN Transistor |
| Datasheet | BU132-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU132 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.22 KB |
| Description | NPN Transistor |
| Datasheet | BU132-INCHANGE.pdf |
|
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·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 600V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO VEBO IC ICM PC TJ Tstg Collector-Emitter Voltage 600 V Emitter-Base Voltage Collector Current-Continuous 6 V 1 A Collector Current-Peak 2 A Collector Power Dissipation@TC=25℃ 15 W Junction Temperature 150 ℃ Storage Temperature -65~150 ℃ BU132 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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