Excellent Safe Operating Area
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 0.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 600V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for ge
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isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 0.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 600V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO VEBO
IC ICM PC TJ Tstg
Collector-Emitter Voltage
600
V
Emitter-Base Voltage Collector Current-Continuous
6
V
1
A
Collector Current-Peak
2
A
Collector Power Dissipation@TC=25℃
15
W
Junction Temperature
150
℃
Storage Temperature
-65~150 ℃
BU132
isc website：www.iscsemi.
BU132 Datasheet
