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BUW132 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT BUW132 850 VCES Collector- Emitter Voltage(VBE= 0) V BUW132A 1000 BUW132 450 VCEO Collector-Emitter Voltage V BUW132A 500 VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 6 V 8 A 16 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W BUW132/A · isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW132 BUW132A IC= 50mA ;

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