Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

FQD50P06

Manufacturer: Inchange Semiconductor

FQD50P06 datasheet by Inchange Semiconductor.

FQD50P06 datasheet preview

FQD50P06 Datasheet Details

Part number FQD50P06
Datasheet FQD50P06-INCHANGE.pdf
File Size 248.74 KB
Manufacturer Inchange Semiconductor
Description P-Channel MOSFET
FQD50P06 page 2

FQD50P06 Overview

·Designed for high current switching applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c , Junction...

FQD50P06 Key Features

  • Drain Current -ID= -50A@ TC=25℃ -Drain Source Voltage
Inchange Semiconductor logo - Manufacturer

More Datasheets from Inchange Semiconductor

View all Inchange Semiconductor datasheets

Part Number Description
FQD50N06 N-Channel MOSFET
FQD13N10 N-Channel MOSFET
FQD7P20 P-Channel MOSFET

FQD50P06 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts