Datasheet4U Logo Datasheet4U.com

FQD50P06 - P-Channel MOSFET

General Description

Designed for high current switching applications.

Key Features

  • Drain Current.
  • ID= -50A@ TC=25℃.
  • Drain Source Voltage- : VDSS= -60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQD50N06 N-Channel MOSFET VBsemi
FQD5N15 150V N-Channel MOSFET Fairchild Semiconductor
FQD5N20 200V N-Channel MOSFET Fairchild Semiconductor
FQD5N20L 200V N-Channel MOSFET Fairchild Semiconductor
FQD5N30 300V N-Channel MOSFET Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
FQD50N06 N-Channel MOSFET
FQD13N10 N-Channel MOSFET
FQD7P20 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor FQD50P06 FEATURES ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max.