Datasheet4U Logo Datasheet4U.com

IPP60R099P7 - N-Channel MOSFET

General Description

Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 100 PD Total Dis

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤0.099Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP60R099P7 MOSFET Infineon
IPP60R099P6 P6 Power Transistor Infineon Technologies
IPP60R099C6 MOSFET Infineon Technologies
IPP60R099C7 MOSFET Infineon
IPP60R099CP Power Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP60R099P6 N-Channel MOSFET
IPP60R099C6 N-Channel MOSFET
IPP60R099C7 N-Channel MOSFET
IPP60R099CP N-Channel MOSFET
IPP60R040C7 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor IPP60R099P7，IIPP60R099P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 117 Tj Max.