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IRF540A - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on) ≤52mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF540A FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous@ TC=25℃ 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 110 W Tj Max.