Download IRF540A Datasheet PDF
Inchange Semiconductor
IRF540A
IRF540A is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Static drain-source on-resistance: RDS(on) ≤52mΩ - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±20 Drain Current-Continuous@ TC=25℃ Drain Current-Single Plused Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature -55~175 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.36 ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET...