Datasheet4U Logo Datasheet4U.com

IRF540A - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on) ≤52mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IRF540A

Datasheet Details

Part number IRF540A
Manufacturer INCHANGE
File Size 278.44 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF540A Datasheet
Additional preview pages of the IRF540A datasheet.

📁 Similar Datasheet

  • IRF540A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF540A - N-Channel Power MOSFET (nELL)
  • IRF540 - Power MOSFET (Vishay)
  • IRF540 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF540 - N-channel TrenchMOS transistor (NXP)
  • IRF540 - 100V 30A N-Channel Power MOSFET (STMicroelectronics)
  • IRF540 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF540 - HEXFET POWER MOSFET (International Rectifier)
  • IRF540 - Power MOSFET (Motorola Semiconductor)
  • IRF540 - N-Channel Power MOSFET (nELL)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF540A FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous@ TC=25℃ 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 110 W Tj Max.
Published: |