Inchange Semiconductor IRF645
N-Channel Mosfet Transistor
| Part No. | IRF645 |
|---|---|
| Datasheet | IRF645 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
FEATURES
●Avalanche Rugged Technology●Rugged Gate Oxide Technology
●Lower Input Capacitance
●Improved Gate Charge
●Extended Safe Operating Area
●Lower Leakage Current: 10mA (Max.) @ VDS = 250V
●DESCRITION
●Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 250 ±20 V V ID Drain Current-Continuous 13 A IDM Drain Current-Single Plused 52 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c RθJA Thermal Resistance,Junction to Case Junction-to-Ambient MAX UNIT 1.0 ℃/W 80 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF645 ELECTRICAL...
