Inchange Semiconductor MJD2955
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJD2955 |
|---|---|
| Datasheet | MJD2955 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A
●Complement to Type MJD3055
●DPAK for Surface Mount
APPLICATIONS
●Minimum Lot-to-Lot variations for robust device performance and reliable operationAPPLICATIONS
●Designed for general-purpose switching and amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current -6 A Collector Power Dissipation @TC=25℃ 20 PC W Collector Power Dissipation @TC=25℃ 1.75 Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W MJD2955 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERI...
