STMicroelectronics MJD2955
The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance.| Part No. | MJD2955 |
|---|---|
| Datasheet | MJD2955 Download |
| Manufacturer |  STMicroelectronics |
| Description | Complementary Silicon Power Transistors |
| Buy | Stock & Price |
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND AMPLIFIERDESCRIPTION
3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP type voltage and current values are negative. February 2002 NPN PNP Value MJD3055 MJD2955 70 60 5 10 6 20 -65 to 150 150 Unit V V V A A W oC oC 1/6 MJD2955 / MJD3055 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 6.25 100 oC/W oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX ICBO Collector Cut-off VCE = 70 V Current (VBE = -1.5 V) VCE = 70 V Collector Cut-off Current (IE = 0) VCB = 70 V VCB = 70 V Tj = 150 oC Tj = 150 oC ICEO Collector Cut-off Cu...
