Inchange Semiconductor MJE13002
Silicon NPN Power Transistors
DESCRIPTION
¡¤With TO-126 package ¡¤High voltage ,high speedAPPLICATIONS
¡¤Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base EmitterDESCRIPTION
MJE13002 ¡¤ Absolute maximum ratings (Tc=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 600 300 9 1.5 3 0.75 1.5 2.25 4.5 40 150 -65~150 ¡æ ¡æ UNIT V V V A A A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.12 UNIT ¡æ/W Free Datasheet Inchange Semiconductor Product Specification Silic...