Collector
Emitter Sustaining Voltage
: VCEO(SUS) = 60V
DC Current Gain
: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A
Complement to the PNP MJE171
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Lo
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isc Silicon NPN Power Transistor
MJE181
DESCRIPTION ·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = 60V ·DC Current Gain—
: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A
·Complement to the PNP MJE171 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
3
ICM
Collector Current-peak
6
IB
Base Current
1
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
1.5 12.
MJE181 Datasheet
