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MJE800T

Manufacturer: Inchange Semiconductor

MJE800T datasheet by Inchange Semiconductor.

MJE800T datasheet preview

MJE800T Datasheet Details

Part number MJE800T
Datasheet MJE800T-INCHANGE.pdf
File Size 207.97 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
MJE800T page 2

MJE800T Overview

·Collector Emitter Breakdown Voltage : V(BR)CEO = 60 V ·DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;.

MJE800T from other manufacturers

View MJE800T datasheet index

Brand Logo Part Number Description Other Manufacturers
Central Semiconductor Logo MJE800T POWER TRANSISTOR Central Semiconductor
Motorola Logo MJE800T 4.0 AMPERE DARLINGTON POWER TRANSISTORS Motorola
Fairchild Logo MJE800 NPN Transistor Fairchild
Motorola Logo MJE800 4.0 AMPERE DARLINGTON POWER TRANSISTORS Motorola
ON Logo MJE800 DARLINGTON POWER TRANSISTORS ON
Inchange Semiconductor logo - Manufacturer

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