IRF6775MTRPbF Datasheet | IRF

Features - Latest MOSFET Silicon technology - Key parameters optimized for Class-D audio amplifier applications - Low RDS(on) for improved efficiency - Low Qg for better THD and improved efficiency - Low Qrr for better THD and lower EMI - Low package stray inductance for reduced ringing and lower EMI - Can deliver up to 250W per channel into 4Ω Load in Half-Bridge Configuration Amplifier - Dual sided cooling patible - patible with existing surface mount technologies - Ro HS pliant containing no lead or bromide - Lead-Free (Qualified up to 260°C Reflow) SQ SX ST SH MQ MX RDS(on) typ. @ VGS = 10V Qg typ. RG(int) max. 5 & ) 5 & MT MN MZ Direct FET ™ ISOMETRIC Applicable Direct FET Outline and Substrate Outline (see p. 6, 7 for details) Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6775MPb F device utilizes Direct FETTM packaging technology. Direct FETTM packaging technology offers lower parasitic inductance and resistance when pared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that acpanies fast current transients. The Direct FETTM package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The Direct FETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation. These features bine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio...