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IRF6775MTRPbF - DIGITAL AUDIO MOSFET

General Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Latest MOSFET Silicon technology.
  • Key parameters optimized for Class-D audio amplifier.

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Datasheet Details

Part number IRF6775MTRPbF
Manufacturer IRF
File Size 252.12 KB
Description DIGITAL AUDIO MOSFET
Datasheet download datasheet IRF6775MTRPbF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIGITAL AUDIO MOSFET IRF6775MTRPbF Key Parameters 150 47 25.0 3.0 m: nC V Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 4Ω Load in Half-Bridge Configuration Amplifier • Dual sided cooling compatible · Compatible with existing surface mount technologies · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) SQ SX ST SH MQ MX VDS RDS(on) typ. @ VGS = 10V Qg typ. RG(int) max.